1
Variable Capacitance Diodes
MA6X344
Silicon epitaxial planar type
For UHF and VHF electronic tuners
I Features
Three isolated elements contained in one package
Large capacitance variation ratio
Small series resistance r
D
Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings T
a
= 25
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
30
V
Peak reverse voltage
V
RM
34
V
Forward current (DC)
I
F
20
mA
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Marking Symbol: 5P
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
1
6
5
4
3
2
1.45
0.1
0.95
0.95
1.9
0.1
0.3
+
0.1
-
0.05
0.5
+
0.1
-
0.05
2.9
+
0.2
-
0.05
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.05
0.16
+
0.1
-
0.06
0.1 to 0.3
1
Cathode 1
4
Anode 3
2
Cathode 2
5
Anode 2
3
Cathode 3
6
Anode 1
Mini Type Package (6-pin)
Internal Connection
6
5
4
1
2
3
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
10
nA
Diode capacitance
C
D(3V)
V
R
= 3 V, f = 1 MHz
11.233
12.781
pF
C
D(25V)
V
R
= 25 V, f = 1 MHz
2.020
2.367
pF
C
D(10V)
V
R
= 10 V, f = 1 MHz
4.358
5.422
pF
C
D(17V)
V
R
= 17 V, f = 1 MHz
2.567
3.100
pF
Capacitance ratio
C
D(3V)
/C
D(25V)
4.60
6.15
Capacitance difference
C
D(17V)
/C
D(25V)
0.37
pF
Diode capacitance deviation
C
C
D(3V)(10V)(17V)(25V)
Note)
*1
%
Series resistance
*2
r
D
C
D
= 9 pF, f = 470 MHz
0.55
0.75
I Electrical Characteristics T
a
= 25
C
Note) 1
Rated input/output frequency: 470 MHz
2
2. Each characteristic is a standard for each diode.
3. *1 : Diode capacitance deviation is controlled to 2% for the rank B and 3% or less for the rank G.
*2 : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Variable Capacitance Diodes
2
MA6X344
C
D
V
R
I
R
T
a
C
D
T
a
I
F
V
F
C
D
rank classification
2.030
11.290
11.806
12.345
12.718
2.091
2.253
2.356
C
D(25V)
(pF)
C
D(3V)
(pF)
2.580
4.380
4.934
5.395
2.738
3.085
C
D(17V)
(pF)
C
D(10V)
(pF)
1
100
10
2
20
3
30
5
50
0
8
16
24
32
4
12
20
28
36 40
Reverse voltage V
R
(V)
Diode capacitance C
D
(pF
)
f
= 1 MHz
T
a
= 25C
0
120
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage V
F
(V)
Forward current I
F
(mA
)
T
a
= 60C
25
C
- 40C
0.97
0
20
40
60
80
100
0.98
0.99
1.00
1.01
1.02
1.03
Ambient temperature T
a
(
C)
C
D
(T
a
=
25
C
)
C
D
(T
a
)
V
R
= 3 V
10 V
17 V
25 V
f
= 1 MHz
10
-2
0
40
80
120
160
20
60
100
140
10
-1
1
10
10
2
Ambient temperature T
a
(
C)
Reverse current I
R
(nA
)
V
R
= 30 V
Secondary rank classification
Primary rank classification
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